Ukwelashwa kwe-graphitization ngokuvamile kudinga amazinga okushisa aphezulu asukela ku-2300 kuya ku-3000℃, kanti isimiso sayo esiyinhloko ukuguqulwa kwama-athomu e-carbon kusuka ekuhlelweni okungahlelekile kuya esakhiweni sekristalu se-graphite esihleliwe ngokwelashwa kokushisa okushisa okuphezulu. Ngezansi ukuhlaziywa okuningiliziwe:
I. Izinga Lokushisa Lokwelashwa Okuvamile Kwe-Graphitization
A. Izidingo Zokushisa Eziyisisekelo
Ukwenziwa kwe-graphitization okuvamile kudinga ukukhushulwa kwezinga lokushisa libe ngu-2300 kuya ku-3000℃, lapho:
- U-2500℃ uphawula indawo yokuguquka ebalulekile, lapho izikhala phakathi kwezingqimba zama-athomu ekhabhoni zincipha kakhulu, futhi izinga le-graphitization landa ngokushesha;
- Ngale kuka-3000℃, izinguquko ziba kancane kancane, futhi ikristalu ye-graphite isondela ekupheleleni, yize izinga lokushisa eliqhubekayo landisa isivuno esinciphisa ukuthuthuka okuncane ekusebenzeni.
B. Umthelela Wokwehluka Kwezinto Ezibonakalayo Ekushiseni
- Ama-carbon alula ukuwasebenzisa (isb., i-petroleum coke): Faka isigaba sokwenziwa kwe-graphitization ku-1700℃, ngokunyuka okuphawulekayo kwezinga lokwenziwa kwe-graphitization ku-2500℃;
- Ama-carbon anzima ukuwasebenzisa njenge-graphiti (isb., i-anthracite): Adinga amazinga okushisa aphezulu (afinyelela ku-3000℃) ukuze kufezwe ushintsho olufanayo.
II. Indlela Yokushisa Okuphezulu Okukhuthaza Ngayo Ukuhleleka Kwe-Athomu Yekhabhoni
A. Isigaba 1 (1000–1800℃): Ukukhishwa Okuguquguqukayo kanye Nokuhlela Okunezinhlangothi Ezimbili
- Amaketanga e-Aliphatic, izibopho ze-CH, kanye ne-C=O ziyaqhekeka, zikhipha i-hydrogen, i-oxygen, i-nitrogen, i-sulfur, nezinye izakhi ngesimo sama-monomers noma ama-molecule alula (isb., i-CH₄, i-CO₂);
- Izendlalelo ze-athomu yekhabhoni ziyanda ngaphakathi kwendiza enezinhlangothi ezimbili, ukuphakama kwe-microcrystalline kukhula kusuka ku-1 nm kuya ku-10 nm, kuyilapho ukuhlanganiswa kwezingqimba ezimbili kusalokhu kungashintshi kakhulu;
- Kokubili izinqubo ze-endothermic (ukusabela kwamakhemikhali) kanye ne-exothermic (izinqubo zomzimba, njengokukhishwa kwamandla okuxhumana kusuka ekunyamalaleni komngcele we-microcrystalline) zenzeka ngasikhathi sinye.
B. Isigaba 2 (1800–2400℃): Uku-oda Okunezinhlangothi Ezintathu kanye Nokulungiswa Kwemingcele Yokusanhlamvu
- Ukwanda kwemvamisa yokudlidliza kokushisa kwama-athomu e-carbon kuwashukumisela ekushintsheni abe amalungiselelo anezilinganiso ezintathu, alawulwa yisimiso samandla akhululekile amancane;
- Ukuhlukana kanye nemingcele yokusanhlamvu ezindizeni zekristalu kuyanyamalala kancane kancane, okufakazelwa ukuvela kwemigqa ebukhali (hko) kanye ne-(001) kuma-spectra e-X-ray diffraction, okuqinisekisa ukwakheka kwamalungiselelo ahlelwe ngohlangothi lwesithathu;
- Okunye ukungcola kwakha ama-carbide (isb., i-silicon carbide), abola abe umusi wensimbi kanye ne-graphite emazingeni okushisa aphezulu.
C. Isigaba 3 (Ngaphezulu kuka-2400℃): Ukukhula Kokusanhlamvu Nokuvuselelwa Kokusanhlamvu
- Ubukhulu bezinhlamvu buyanda eceleni kwe-a-axis bufinyelela kuma-10–150 nm kanye naseduze kwe-c-axis kuya cishe ezingqimbeni ezingama-60 (cishe ama-20 nm);
- Ama-athomu ekhabhoni ahlungwa nge-lattice ngokusebenzisa ukufuduka kwangaphakathi noma phakathi kwama-molecule, kuyilapho izinga lokuhwamuka kwezinto zekhabhoni landa kakhulu ngokushisa;
- Ukushintshana kwezinto ezisebenzayo kwenzeka phakathi kwezigaba eziqinile nezigesi, okuholela ekwakhekeni kwesakhiwo sekristalu se-graphite esihlelekile kakhulu.
III. Ukuthuthukisa Izinga Lokushisa Ngezinqubo Ezikhethekile
A. I-Catalytic Graphitization
Ukwengezwa kwama-catalyst anjenge-iron noma i-ferrosilicon kunganciphisa kakhulu amazinga okushisa e-graphitization afike ku-1500–2200℃. Isibonelo:
- I-catalyst ye-Ferrosilicon (okuqukethwe kwe-silicon okungu-25%) inganciphisa izinga lokushisa kusuka ku-2500–3000℃ kuya ku-1500℃;
- I-BN catalyst inganciphisa izinga lokushisa libe ngaphansi kuka-2200℃ ngenkathi ithuthukisa ukuqondiswa kwemicu yekhabhoni.
B. I-Graphitization Yokushisa Okuphezulu Kakhulu
Isetshenziselwa izinhlelo zokusebenza ezihlanzekile kakhulu njenge-graphite yezinga lenuzi kanye ne-graphite yezinga lendiza, le nqubo isebenzisa ukushisa okuphakathi noma ukushisa kwe-plasma arc (isb., amazinga okushisa e-argon plasma core afinyelela ku-15,000℃) ukuze kufinyelelwe amazinga okushisa angaphezulu kuka-3200℃ emikhiqizweni;
- Izinga le-graphitization lidlula u-0.99, ngokuqukethwe okungcolile okuphansi kakhulu (okuqukethwe komlotha < 0.01%).
IV. Umthelela Wokushisa Emiphumeleni Yokwenza I-Graphitization
A. Ukumelana Nokushisa kanye Nokuqhuba Ukushisa
Kuwo wonke amazinga okukhula kwe-graphitization angu-0.1, ukumelana nokushisa kwehla ngo-30%, kanti ukuhanjiswa kokushisa kukhuphuka ngo-25%. Isibonelo, ngemuva kokwelashwa ku-3000℃, ukumelana nokushisa kwe-graphite kungehla kufike ku-1/4–1/5 yenani layo lokuqala.
B. Izakhiwo Zemishini
Amazinga okushisa aphezulu anciphisa isikhala phakathi kwezingqimba ze-graphite sibe amanani acishe afaneleke (0.3354 nm), okwandisa kakhulu ukumelana nokushaqeka kokushisa kanye nokuqina kwamakhemikhali (ngokunciphisa kwe-coefficient yokukhulisa okuqondile okungu-50%–80%), kuyilapho futhi kunikeza ukuthambisa kanye nokumelana nokuguguleka.
C. Ukuthuthukiswa Kobumsulwa
Ku-3000℃, izibopho zamakhemikhali ku-99.9% yamakhemikhali emvelo ziyaqhekeka, okuvumela ukungcola ukuthi kukhishwe ngesimo segesi futhi kuholele ekuhlanzekeni komkhiqizo okungu-99.9% noma ngaphezulu.
Isikhathi sokuthunyelwe: Septhemba 11-2025