Izinto ezinezinhlangothi ezimbili, njenge-graphene, zikhanga kuzo zombili izinhlelo zokusebenza ezivamile ze-semiconductor kanye nezinhlelo ezisafufusa kuma-electronics flexible. Kodwa-ke, amandla aqinile we-graphene aphumela ekuqhekekeni kobunzima obuphansi, okwenza kube inselele ukusizakala ngezakhiwo zayo ze-elekthronikhi ezingajwayelekile kuma-elekthronikhi anwebekayo. Ukuze unike amandla ukusebenza okuhle kakhulu okuncike kuhlobo lwamakhondaktha we-graphene abonisa ngale, sidale ama-graphene nanoscroll phakathi kwezendlalelo ze-graphene ezistakiwe, ezibizwa ngokuthi i-multilayer graphene/graphene scrolls (MGGs). Ngaphansi kokucindezeleka, eminye imiqulu ivale izizinda ezihlukanisiwe ze-graphene ukuze kugcinwe inethiwekhi evukuzayo evumela ukusebenza okuhle kakhulu ezinkingeni eziphezulu. Ama-MGG e-Trilayer asekelwa kuma-elastomers agcine u-65% wokuqhuba kwawo kwasekuqaleni ku-100% uhlobo, oluhambisana nesiqondiso sokugeleza kwamanje, kuyilapho amafilimu ama-trilayer e-graphene ngaphandle kwama-nanoscroll agcine kuphela u-25% wokuqhuba kwawo kokuqala. I-all-carbon transistor enwebekayo eyenziwe kusetshenziswa ama-MGG njengama-electrode ibonise ukudluliswa kwe->90% futhi igcine u-60% womkhiqizo wayo wamanje ku-120% uhlobo (okuhambisana nendawo yokuthutha imali). Lawa ma-transistors ekhabhoni anwebeka kakhulu futhi asobala anganika amandla ama-optoelectronics anwebekayo anwebekayo.
I-elekthronikhi ebonakalayo enwebekayo iyinkambu ekhulayo enezinhlelo zokusebenza ezibalulekile ezinhlelweni ezithuthukisiwe ze-biointegrated (1, 2) kanye namandla okuhlanganisa nama-optoelectronics anwebekayo (3, 4) ukuze kukhiqizwe amarobhothi athambile nezibonisi. I-Graphene ibonisa izinto ezifiseleka kakhulu zogqinsi lwe-athomu, ukukhanya okuphezulu, kanye nokusebenza okuphezulu, kodwa ukuqaliswa kwayo ezinhlelweni ezinwebekayo kuvinjelwe ukuthambekela kwayo kokuqhekeka emigudwini emincane. Ukunqoba imikhawulo yemishini ye-graphene kunganika amandla ukusebenza okusha kumadivayisi abonisa ngale anwebekayo.
Izakhiwo eziyingqayizivele ze-graphene ziyenza ibe ikhandidethi eliqinile esizukulwaneni esilandelayo sama-electrode e-transparent conductive (5, 6). Uma kuqhathaniswa ne-conductor esobala evame ukusetshenziswa kakhulu, i-indium tin oxide [ITO; 100 ohms/square (sq) ekukhanyeni okungu-90% ], i-monolayer graphene ekhuliswe i-chemical vapor deposition (CVD) inenhlanganisela efanayo yokumelana neshidi (125 ohms/sq) nokukhanyela (97.4%) (5). Ngaphezu kwalokho, amafilimu e-graphene anokuguquguquka okungajwayelekile uma kuqhathaniswa ne-ITO (7). Isibonelo, ku-substrate yepulasitiki, ukuqhutshwa kwayo kungagcinwa ngisho nendawo egobileyo yokugoba encane njengo-0.8 mm (8). Ukuze kuqhutshekwe kuthuthukiswe ukusebenza kwayo kukagesi njengomqhubi ovumelana nezimo, imisebenzi yangaphambilini ithuthukise izinto ezixubile ze-graphene ezine-one-dimensional (1D) zesiliva nanowires noma i-carbon nanotubes (CNTs) (9–11). Ngaphezu kwalokho, i-graphene isetshenziswe njengama-electrode kuma-semiconductors e-heterostructural exubile (njenge-2D bulk Si, 1D nanowires/nanotubes, namachashazi angu-0D quantum ) (12), ama-flexible transistors, amaseli elanga, nama-light-emitting diode (LEDs) (13) -23).
Nakuba i-graphene ibonise imiphumela ethembisayo ye-elekthronikhi eguquguqukayo, ukusetshenziswa kwayo ku-elekthronikhi elula kunqunyelwe izakhiwo zayo zemishini (17, 24, 25); I-graphene inokuqina okungaphakathi kwendiza okungu-340 N/m kanye nemoduli Yentsha engu-0.5 TPa ( 26). Inethiwekhi ye-carbon-carbon eqinile ayinikezi noma yiziphi izindlela zokulahla amandla obunzima obusetshenzisiwe futhi ngenxa yalokho iqhekeka kalula ngaphansi kobunzima obungu-5%. Isibonelo, i-CVD graphene edluliselwe ku-polydimethylsiloxane (PDMS) enwebekayo substrate ingagcina kuphela ukusebenza kwayo ngaphansi kobunzima obungu-6% (8). Izibalo zetiyori zibonisa ukuthi ukushwabana nokuhlangana phakathi kwezendlalelo ezihlukene kufanele kwehlise kakhulu ukuqina (26). Ngokunqwabelanisa i-graphene izendlalelo eziningi, kubikwa ukuthi le graphene ye-bi- noma i-trilayer inwebeka ibe uhlobo lwama-30%, ikhombisa ukuguquka kokumelana okuphindwe izikhathi eziyi-13 kune-monolayer graphene (27). Kodwa-ke, lokhu kunwebeka kusengaphansi kakhulu kuma-c onductors we-state-of-the-art anwebekayo (28, 29).
Ama-Transistors abalulekile ezinhlelweni ezinwebekayo ngoba anika amandla ukufunda kwenzwa okuyinkimbinkimbi nokuhlaziya isignali (30, 31). Ama-Transistors ku-PDMS ane-graphene yama-multilayer njengama-electrode omthombo/wokukhipha amanzi kanye nezinto zesiteshi zingagcina ukusebenza kukagesi kufikela ku-5% uhlobo (32), okungaphansi Ngokuphawulekayo kwenani elincane elidingekayo (~50%) lezinzwa zokuqapha impilo ezigqokekayo nesikhumba sikagesi ( 33, 34). Muva nje, kuhlolwe indlela ye-graphene kirigami, futhi i-transistor efakwe i-electrolyte ewuketshezi inganwetshwa ifike ku-240% (35). Nokho, le ndlela idinga i-graphene emisiwe, eyenza inqubo yokwenziwa ibe nzima.
Lapha, sifinyelela amadivayisi e-graphene anwebeka kakhulu ngokuhlanganisa imiqulu ye-graphene (~1 ukuya ku-20 μm ubude, ~0.1 ukuya ku-1 μm ububanzi, kanye no-10 ukuya ku-100 nm ukuphakama) phakathi kwezingqimba ze-graphene. Sicabanga ukuthi le miqulu ye-graphene inganikeza izindlela ezisebenzayo zokuvala imifantu kumashidi e-graphene, ngaleyo ndlela igcine ukusebenza okuphezulu ngaphansi kobunzima. Imiqulu ye-graphene ayidingi ukuhlanganiswa okwengeziwe noma inqubo; zakhiwe ngokwemvelo phakathi nenqubo yokudlulisa okumanzi. Ngokusebenzisa ama-multilayer G/G (graphene/graphene) scroll (MGGs) ama-electrode anwebekayo e-graphene (umthombo/umfucumfucu kanye nesango) kanye nama-CNT e-semiconducting, sikwazile ukukhombisa ama-transistors e-carbon yonke abonakala esobala kakhulu futhi anwebeka kakhulu, anganwetshwa aze afike ku-120. % uhlobo (oluhambisana nendawo yokushaja ezokuthutha) futhi igcine u-60 % womkhiqizo wayo wamanje wangempela. Lena i-transistor esekwe ku-carbon-based esobala kakhulu elula kunazo zonke kuze kube manje, futhi inikeza okwamanje okwanele ukushayela i-LED ye-inorganic.
Ukuze unike amandla ama-electrode e-graphene anwebekayo endaweni enkulu, sikhethe i-graphene ekhule i-CVD ku-Cu foil. I-Cu foil imisiwe maphakathi neshubhu le-quartz le-CVD ukuze kuvunyelwe ukukhula kwe-graphene nhlangothi zombili, kwakheka izakhiwo ze-G/Cu/G . Ukuze sidlulise i-graphene, siqale saphotha ungqimba oluncane lwe-poly(methyl methacrylate) (PMMA) ukuze sivikele uhlangothi olulodwa lwe-graphene, esiluqambe ngokuthi yi-topside graphene (okuphambene nolunye uhlangothi lwe-graphene), futhi kamuva, yonke ifilimu (PMMA/top graphene/Cu/bottom graphene) yacwiliswa ku-(NH4)2S2O8 isisombululo ukuze kukhishwe i-Cu foil. I-graphene eseceleni eliphansi ngaphandle kwe-PMMA enamathelayo izoba nemifantu kanye nokukhubazeka okuvumela i-etchant ukuthi ingene (36, 37). Njengoba kubonisiwe ku-Fig. 1A, ngaphansi komthelela we-top-tension, izizinda ze-graphene ezikhishiwe zagoqwa zaba imiqulu futhi ngemva kwalokho zanamathiselwa kufilimu esele ye-top-G/PMMA. I-top-G/G scrolls ingadluliselwa kunoma iyiphi i-substrate, efana ne-SiO2/Si, ingilazi, noma i-polymer ethambile. Ukuphinda le nqubo yokudlulisa izikhathi eziningana ku-substrate efanayo kunikeza izakhiwo ze-MGG.
(A) Umdwebo wohlelo lwenqubo yokwenziwa kwama-MGG njenge-electrode elula. Ngesikhathi sokudluliswa kwe-graphene, i-graphene engemuva ku-Cu foil yaphulwa emingceleni nasemigqeni, yagoqwa yaba yizimo ezingafaneleki, futhi yanamathiselwa ngokuqinile kumafilimu angaphezulu, kwakheka ama-nanoscroll. Ikhathuni yesine ikhombisa isakhiwo se-MGG esistakiwe. (B no-C) Izimpawu ze-TEM zokucaca okuphezulu kwe-MGG ye-monolayer, egxile ku-monolayer graphene (B) kanye nesifunda somqulu (C), ngokulandelanayo. I-inset ethi (B) yisithombe esikhulisa kancane esibonisa ukumila kahle kwe-monolayer MGG kugridi ye-TEM. Ama-inset of (C) amaphrofayili okuqina athathwe ngamabhokisi angunxande akhonjiswe esithombeni, lapho amabanga phakathi kwezindiza ze-athomu engu-0.34 kanye no-0.41 nm. (D ) I-Carbon K-edge EEL spectrum enesici somfanekiso π* kanye no-σ* iziqongo ezinelebula. (E) Isithombe se-AFM sesigaba sokuskrola kwe-G/G ye-monolayer enephrofayela yobude eduze komugqa wamachashazi aphuzi. (F kuya ku-I) Imicroscopy yokubona nesithombe se-AFM sika-trilayer G ngaphandle (F no-H) kanye nemiqulu (G kanye ne-I) kuma-substrates angu-300-nm-thick SiO2/Si, ngokulandelanayo. Imiqulu emele abantu kanye nemibimbi yayibhalwe ukuze kugqanyiswe umehluko wakho.
Ukuqinisekisa ukuthi imiqulu iyi-graphene egoqiwe ngokwemvelo, senze izifundo ze-electron microscopy (TEM) yokudlulisa amandla aphezulu kanye nokulahlekelwa kwamandla e-electron (EEL) ezakhiweni zokuskrola ze-monolayer top-G/G. Umfanekiso 1B ubonisa ukwakheka kwe-hexagonal ye-graphene ye-monolayer, futhi isethi iyisimo sesimo sefilimu iyonke embozwe emgodini owodwa wekhabhoni wegridi ye-TEM. I-graphene ye-monolayer inweba ingxenye enkulu yegridi, futhi amanye ama-graphene flakes phambi kwezitaki eziningi zamasongo angama-hexagonal avela (Fig. 1B). Ngokusondeza emqulwini ngamunye (Fig. 1C), sibone inani elikhulu lamaphethelo e-graphene lattice, nesikhala se-lattice kububanzi obungu-0.34 kuya ku-0.41 nm. Lezi zilinganiso ziphakamisa ukuthi ama-flakes asongwa ngokungahleliwe futhi awawona ama-graphite aphelele, anesikhala se-lattice esingu-0.34 nm kusitaki sesendlalelo esithi "ABAB". Umfanekiso 1D ubonisa i-carbon K-edge EEL spectrum, lapho ukuphakama okungu-285 eV kuvela ku-π* orbital kanti enye eduze kuka-290 eV kungenxa yokushintshwa kwe-orbital σ*. Kuyabonakala ukuthi i-sp2 bonding ibusa kulesi sakhiwo, iqinisekisa ukuthi imiqulu inemifanekiso eminingi.
Izithombe ze-Optical microscopy kanye ne-atomic force microscopy (AFM) zinikeza ukuqonda mayelana nokusatshalaliswa kwama-graphene nanoscroll kuma-MGG (Umfanekiso 1, E kuya ku-G, namakhiwane. S1 kanye ne-S2). Imiqulu isakazwa ngokungahleliwe phezu kwendawo, futhi ukuminyana kwayo endizeni kukhuphuka ngokulingana nenani lezendlalelo ezistakiwe. Imiqulu eminingi iphithene ibe amafindo futhi ibonise ukuphakama okungeyona i-nonuniform ebangeni lika-10 kuya ku-100 nm. Zingu-1 kuya ku-20 μm ubude no-0.1 kuya ku-1 μm ububanzi, kuye ngosayizi bama-graphene flakes awo okuqala. Njengoba kuboniswe ku-Fig. 1 (H no-I), imiqulu inosayizi abakhulu kakhulu kunemibimbi, okuholela ekuxhumaneni okuqinile phakathi kwezingqimba zegraphene.
Ukuze silinganise izici zikagesi, senze iphethini amafilimu e-graphene anezakhiwo zokuskrola noma ngaphandle kwazo kanye nesendlalelo esinqwabelene sibe yimichilo engu-300-μm-wide kanye ne-2000-μm-ubude sisebenzisa i-photolithography. Ukumelana nama-probe amabili njengomsebenzi wobunzima kuye kwalinganiswa ngaphansi kwezimo ze-ambient. Ukuba khona kwemiqulu kunciphise ukumelana ne-monolayer graphene ngo-80% ngokuncipha kwe-2.2% kuphela ekudluliseni (fig. S4). Lokhu kuqinisekisa ukuthi ama-nanoscroll, anomthamo omkhulu wamanje kuze kufike ku-5 × 107 A/cm2 (38, 39), enza umnikelo omuhle kakhulu kagesi kuma-MGG. Kuwo wonke ama-mono-, bi-, kanye ne-trilayer plain graphene kanye nama-MGG, i-MGG ye-trilayer inokuqhuba okuhle kakhulu nokungafihli cishe okungama-90%. Ukuze siqhathanise neminye imithombo ye-graphene ebikwe ezincwadini, siphinde sakala ukuphikiswa kweshidi le-probe emine (fig. S5) futhi sabhala njengomsebenzi wokudlulisa ku-550 nm (fig. S6) ku-Fig. 2A. I-MGG ikhombisa ukusebenza okuqhathanisekayo noma okuphezulu nokuba sobala kune-graphene enqwabelene eyenziwe nge-multila yer plain kanye ne-graphene oxide encishisiwe (RGO) (6, 8, 18). Qaphela ukuthi ukuphikiswa kweshidi le-graphene engenalutho enqwabelene eyenziwe ngezitaki eziningi kuphezulu kancane kunokwe-MGG yethu, mhlawumbe ngenxa yezimo zabo zokukhula ezingalungiselelwe kanye nendlela yokudlulisa.
(A) Ukumelana neshidi le-probe emine uma kuqhathaniswa nokudluliselwa ku-550 nm ngezinhlobo ezimbalwa ze-graphene, lapho izikwele ezimnyama zisho ama-MGG ama-mono-, bi-, kanye nama-trilayer; imibuthano ebomvu nonxantathu abaluhlaza bahambisana ne-multilayer plain graphene etshalwe ku-Cu no-Ni kusukela ezifundweni zika-Li et al. (6) kanye noKim et al. (8), ngokulandelana, futhi kamuva idluliselwe ku-SiO2/Si noma i-quartz; kanye nonxantathu abaluhlaza bangamagugu e-RGO ngamadigri ahlukene okunciphisa kusukela ocwaningweni lukaBonaccorso et al. (18). (B no-C) Ukushintsha kokumelana okujwayelekile kwe-mono-, bi- kanye ne-trilayer MGGs kanye no-G njengomsebenzi we-perpendicular (B) kanye ne-parallel (C) ubunzima ekuqondeni kokugeleza kwamanje. (D) Ukushintsha kokumelana okujwayelekile kwe-bilayer G (bomvu) ne-MGG (emnyama) ngaphansi kobunzima be-cyclic ukulayisha kufika ku-50% uhlobo lwe-perpendicular. (E) Ukushintsha kokumelana okujwayelekile kwe-trilayer G (bomvu) ne-MGG (emnyama) ngaphansi kwe-cyclic strain elayisha kufika ku-90% uhlobo oluhambisanayo. (F) Ukushintsha kwamandla okujwayelekile kwe-mono-, i-bi- kanye ne-trilayer G kanye ne-bi- kanye ne-trilayer MGGs njenge-functio n yobunzima. I-inset iyisakhiwo se-capacitor, lapho i-polymer substrate iyi-SEBS kanye nongqimba lwe-polymer dielectric luyi-SEBS engu-2-μm-thick.
Ukuze sihlole ukusebenza kwe-MGG okuncike ku-strain, sidlulisele i-graphene ku-thermoplastic elastomer styrene-ethylene-butadiene-styrene (SEBS) substrates (~2 cm ububanzi no-~5 cm ubude), futhi conductivity kukalwa njengoba i-substrate yeluliwe. (bheka Izinto Ezisetshenziswayo Nezindlela) kokubili i-perpendicular futhi ihambisana nesiqondiso sokugeleza kwamanje (Fig. 2, B kanye no-C). Ukuziphatha kukagesi okuncike kubunzima kuye kwaba ngcono ngokufakwa kwama-nanoscroll kanye nezinombolo ezikhulayo zezendlalelo ze-graphene. Isibonelo, lapho ubunzima buhambisana nokugeleza kwamanje, ku-monolayer graphene, ukungezwa kwemiqulu kwandisa ubunzima ekuqhekekeni kukagesi kusuka ku-5 kuya ku-70%. Ukubekezelela ubunzima kwe-trilayer graphene nakho kuthuthukiswe kakhulu uma kuqhathaniswa ne-monolayer graphene. Nge-nanoscroll, ngo-100% we-perpendicular strain, ukumelana kwesakhiwo se-MGG se-trilayer kukhuphuke ngo-50% kuphela, uma kuqhathaniswa no-300% we-trilayer graphene ngaphandle kwemiqulu. Ukushintsha kokumelana ngaphansi komthwalo we-cyclic straining kuye kwaphenywa. Ukuze uqhathanise (Fig. 2D), ukuphikiswa kwefilimu ye-plain bilayer graphene kukhuphuke cishe izikhathi ezingu-7.5 ngemva kwemijikelezo engu-700 ku-50% we-perpendicular strain futhi kwaqhubeka kwanda ngokucindezeleka kumjikelezo ngamunye. Ngakolunye uhlangothi, ukumelana kwe-bilayer MGG kukhuphuke cishe izikhathi ezingu-2.5 ngemva kwemijikelezo engu-700. Isebenzisa kufika ku-90% uhlobo oluhambisana nendlela efanayo, ukumelana kwe-trilayer graphene kukhuphuke ~ izikhathi ezingu-100 ngemva kwemijikelezo engu-1000, kuyilapho kuyizikhathi ezingu-~8 kuphela ku-MGG ye-trilayer (Fig. 2E). Imiphumela yebhayisikili iboniswa ku-fig. I-S7. Ukwenyuka okushesha kakhulu kokumelana ne-parallel strain direction kungenxa yokuthi umumo wemifantu uncike lapho ukugeleza khona kwamanje. Ukuchezuka kokumelana ngesikhathi sokulayisha nokuthulula kubangelwa ukutholakala kwe-viscoelastic kwe-SEBS elastomer substrate. Ukumelana okuzinzile kwamapheshana e-MGG ngesikhathi sokuhamba ngebhayisikili kungenxa yokuba khona kwemiqulu emikhulu engakwazi ukuhlanganisa izingxenye eziqhekekile ze-graphene (njengoba i-obse rved by AFM), okusiza ukugcina indlela ye-percolating. Lesi senzo sokugcina ukuguquguquka kwendlela yokubhoboza sike sabikwa ngaphambili kumafilimu ensimbi aqhekekile noma esemiconductor kuma-elastomer substrates (40, 41).
Ukuze sihlole lawa mafilimu asekelwe ku-graphene njengama-electrode asesangweni kumadivayisi anwebekayo, simboze isendlalelo se-graphene ngesendlalelo se-dielectric se-SEBS (ugqinsi olu-2 μm) futhi saqapha ukushintsha kwamandla e-dielectric njengomsebenzi wobunzima (bona i-Fig. 2F kanye Nezisetshenziswa Ezingeziwe ze-Supplementary Materials for imininingwane). Siqaphele ukuthi amandla ane-monolayer engenalutho kanye nama-electrode e-graphene e-bilayer ehla ngokushesha ngenxa yokulahlekelwa ukuqhutshwa kwe-graphene endizeni. Ngokuphambene, amandla afakwe i-MGGs kanye ne-plain trilayer graphene abonise ukukhuphuka kwe-capacitance nge-strain, okulindeleke ngenxa yokuncipha kokuqina kwe-dielectric kanye nobunzima. Ukwenyuka okulindelekile ku-capacitance kufanelana kahle kakhulu nesakhiwo se-MGG (fig. S8). Lokhu kubonisa ukuthi i-MGG ifaneleka njenge-electrode yesango lama-transistors alula.
Ukuze kuqhutshekwe kuphenywe indima yokuskrola kwe-graphene ye-1D ekubekezeleni kobunzima bokuhamba kukagesi nokulawula kangcono ukuhlukaniswa phakathi kwezendlalelo ze-graphene, sisebenzise ama-CNT afakwe isifutho ukuze amiselele imiqulu ye-graphene (bona Izinto Ezingeziwe). Ukuze silingise izakhiwo ze-MGG, sibeke ukuminyana okuthathu kwama-CNTs (okungukuthi, i-CNT1
(A kuya ku-C) Izithombe ze-AFM zokuminyana okuthathu okuhlukene kwama-CNTs (CNT1
Ukuze siqhubeke siqonde amandla azo njengama-electrode ezinto zikagesi ezinwebekayo, siphenye ngokuhlelekile ama-morphology e-MGG kanye ne-G-CNT-G ngaphansi kobunzima. I-Optical microscopy kanye ne-electron microscopy (SEM) yokuskena akuzona izindlela eziphumelelayo zokulinganisa izinhlamvu ngenxa yokuthi zombili azinakho ukugqama kombala futhi i-SEM ingaphansi kwezithombe zobuciko phakathi nokuskena i-electron lapho i-graphene iku-polymer substrates (amakhiwane. S9 kanye ne-S10). Ukuze sibheke endaweni ye-graphene ngaphansi kokucindezeleka, siqoqe izilinganiso ze-AFM kuma-MGG amathathu kanye ne-graphene engenalutho ngemva kokudlulisela kuma-substrates amancane kakhulu (~0.1 mm) nama-SEBS anwebekayo. Ngenxa yokukhubazeka kwangaphakathi ku-CVD graphene kanye nokulimala kwangaphandle phakathi nenqubo yokudlulisa, imifantu ikhiqizwa ngokungenakugwenywa ku-graphene ehlutshiwe, futhi ngokucindezeleka okwandayo, imifantu yaba minyene (Fig. 4, A to D). Ngokuya ngesakhiwo sokupakisha sama-electrode asekelwe ku-carbon, imifantu ibonisa i-morphologies ehlukene (fig. S11) (27). Ukuminyana kwendawo yokuqhekeka (echazwa njengendawo yokuqhekeka/indawo ehlaziywe) ye-graphene ye-multilayer ingaphansi kwaleyo ye-monolayer graphene ngemva kobunzima, obuhambisana nokwanda kokusebenza kukagesi kuma-MGG. Ngakolunye uhlangothi, imiqulu ivame ukubhekwa ukuze ivale imifantu, inikeze izindlela ezengeziwe zokuqhuba ifilimu ehlungiwe. Isibonelo, njengoba kubhalwe emfanekisweni we-Fig. 4B, umqulu obanzi wawela umfantu ku-MGG ye-trilayer, kodwa awukho umqulu owabonwa ku-graphene ethafeni (Fig. 4, E kuya ku-H). Ngokufanayo, ama-CNT aphinde avala imifantu ku-graphene (fig. S11). Ukuminyana kwendawo yokuqhekeka, ukuminyana kwendawo yokuskrola, kanye nokuqina kwamafilimu kufinyezwa ku-Fig. 4K.
(A ukuya ku-H) Ku-situ izithombe ze-AFM ze-trilayer G/G scrolls (A ukuya ku-D) kanye nezakhiwo ze-trilayer G (E ukuya ku-H) ku-SEBS ezacile kakhulu (~0.1 mm ubukhulu) i-elastomer ku-0, 20, 60, kanye no-100 % ubunzima. Imifantu emele imifantu nemiqulu ikhombe ngemicibisholo. Zonke izithombe ze-AFM zisendaweni engu-15 μm × 15 μm, zisebenzisa ibha yesikali yombala efanayo naleyo enelebula ngayo. (I) Ijometri yokulingisa yama-electrode e-graphene enephethini ye-monolayer ku-substrate ye-SEBS. (J) Imephu yekhonta yokulingisa yohlobo olukhulu lwe-logarithmic oluyinhloko ku-monolayer graphene kanye ne-SEBS substrate ku-20% uhlobo lwangaphandle. (K) Ukuqhathaniswa kobukhulu bendawo yokuqhekeka (ikholomu ebomvu), ukuminyana kwendawo yokuskrola (ikholomu ephuzi), nobuhwaqane bobuso (ikholomu eluhlaza okwesibhakabhaka) yezakhiwo ezihlukene zegraphene.
Lapho amafilimu e-MGG enwetshiwe, kunenye indlela ebalulekile eyengeziwe yokuthi imiqulu ingakwazi ukuvala izifunda eziqhekekile ze-graphene, igcine inethiwekhi ye-percolating. Imiqulu ye-graphene iyathembisa ngoba ingaba amashumi ama-micrometer ubude futhi ngenxa yalokho ikwazi ukuvala imifantu ngokuvamile efika esikalini se-micrometer. Ngaphezu kwalokho, ngenxa yokuthi imiqulu iqukethe ama-multilayer e-graphene, kulindeleke ukuthi ibe nokumelana okuphansi. Uma kuqhathaniswa, amanethiwekhi e-CNT aminyene kakhulu (adlulisa kancane) ayadingeka ukuze anikeze amandla afanayo okubhuloho, njengoba ama-CNT mancane (ngokuvamile ama-micrometer ambalwa ngobude) futhi ahambisa kancane kunemiqulu. Ngakolunye uhlangothi, njengoba kuboniswe emkhiwaneni. I-S12, kuyilapho i-graphene iqhekeka phakathi nokunwetshwa ukuze ibhekane nobunzima, imiqulu ayiqhekeki, okubonisa ukuthi kungenzeka ukuthi yakamuva islayida ku-graphene engaphansi. Isizathu sokuthi zingaqhekeki kungenzeka kungenxa yesakhiwo esigoqiwe, esakhiwe izingqimba eziningi ze-graphene (~1 kuya ku-2 0 μm ubude, ~0.1 kuya ku-1 μm ububanzi, kanye no-10 kuya ku-100 nm ukuphakama), imodulus esebenza kahle ephezulu kunegraphene yesendlalelo esisodwa. Njengoba kubikwe iGreen and Hersam (42), amanethiwekhi e-metallic CNT (ububanzi beshubhu obungu-1.0 nm) angafinyelela ukumelana neshidi eliphansi <100 ohms/sq naphezu kokumelana okukhulu kwe-junction phakathi kwama-CNT. Uma kucatshangelwa ukuthi imiqulu yethu ye-graphene inobubanzi obungu-0.1 kuya ku-1 μm nokuthi imiqulu ye-G/G inezindawo zokuthintana ezinkulu kakhulu kune-CNTs, ukumelana nokuxhumana nendawo yokuxhumana phakathi kwemiqulu ye-graphene ne-graphene akumele kube yizici ezikhawulela ukugcina ukuqhutshwa okuphezulu.
I-graphene ine-modulus ephakeme kakhulu kune-substrate ye-SEBS. Nakuba ukushuba okusebenzayo kwe-electrode ye-graphene kuphansi kakhulu kunokwe-substrate, ukuqina kwe-graphene izikhathi ukujiya kwayo kuqhathaniswa nokwe-substrate (43, 44), okuholela kumphumela omaphakathi wesiqhingi esiqinile. Silingise ukwakheka kwe-graphene engu-1-nm-thick ku-substrate ye-SEBS (bona Izinto Ezingeziwe ukuze uthole imininingwane). Ngokusho kwemiphumela yokulingisa, lapho u-20% we-strain usetshenziswa ku-substrate ye-SEBS ngaphandle, ukuhlukumeza okujwayelekile ku-graphene ngu-~ 6.6% (I-Fig. 4J ne-fig. S13D), ehambisana nokubhekwa kokuhlola (bona i-fig. S13) . Siqhathanise ubunzima ezifundeni ezinephethini zegraphene kanye ne-substrate sisebenzisa i-optical microscopy futhi sathola ubunzima esifundeni se-substrate okungenani buphindeka kabili ubukhulu besifunda se-graphene. Lokhu kukhombisa ukuthi uhlobo olusetshenziswa kumaphethini e-electrode e-graphene lungavaleka kakhulu, kwakheka iziqhingi eziqinile ze-graphene phezu kwe-SEBS (26, 43, 44).
Ngakho-ke, ikhono lama-electrode e-MGG ukugcina ukusebenza okuphezulu ngaphansi kokucindezeleka okuphezulu kungenzeka linikwe amandla yizindlela ezimbili ezinkulu: (i) Imiqulu ingakwazi ukuhlanganisa izifunda ezinqanyuliwe ukuze kugcinwe umzila we-conductive percolation, futhi (ii) amashidi e-graphene/elastomer angase aslayide. phezu komunye nomunye, okuholela ekunciphiseni kokucindezeleka kuma-electrode e-graphene. Okwezendlalelo eziningi ze-graphene edluliselwe ku-elastomer, izendlalelo azinamathiselwe ngokuqinile kwenye nenye, ezingase zishelele ekuphenduleni ubunzima (27). Imiqulu iphinde yandisa ubulukhuni bezendlalelo zegraphene, okungase kusize ekwenyuseni ukuhlukaniswa phakathi kwezingqimba ze-graphene futhi ngenxa yalokho inike amandla ukuslayidela kwezendlalelo zegraphene.
Imishini ekhiqiza ikhabhoni yonke ilandelwa ngentshiseko ngenxa yezindleko eziphansi kanye nokusebenza okuphezulu. Esimweni sethu, ama-transistors e-carbon yonke akhiwe kusetshenziswa isango le-graphene eliphansi, umthombo ophezulu we-graphene/drain contact, i-semiconductor ye-CNT ehlungiwe, kanye ne-SEBS njenge-dielectric (Fig. 5A). Njengoba kuboniswe ku-Fig. 5B, idivayisi enekhabhoni yonke ene-CNTs njengomthombo/ukukhipha amanzi kanye nesango (idivayisi ephansi) i-opaque kakhulu kunedivayisi ene-graphene electrode (idivayisi ephezulu). Lokhu kungenxa yokuthi amanethiwekhi e-CNT adinga ukujiya okukhudlwana futhi, ngenxa yalokho, ukudluliswa kwe-optical okuphansi ukuze kuzuzwe ukumelana kweshidi okufana nalokho kwe-graphene (fig. S4). Umfanekiso wesi-5 (C no-D) ubonisa amajika amele ukudluliswa nokuphumayo ngaphambi kobunzima be-transistor eyenziwe ngama-electrode e-bilayer MGG. Ububanzi besiteshi nobude be-transistor engacindezelwe bekungu-800 no-100 μm, ngokulandelana. Isilinganiso esilinganisiwe sokuvula/ukuvala sikhulu kuno-103 ngamaza okukhanyisa nokuvala kumazinga angu-10−5 no-10−8 A, ngokulandelanayo. Ijika eliphumayo libonisa izindlela ezifanele zomugqa kanye ne-sa turation ezincike ku-voltage yesango elicacile, okubonisa ukuthintana okuhle phakathi kwama-CNT nama-electrode e-graphene (45). Ukumelana nokuxhumana nama-electrode e-graphene kwaqashelwa ukuthi kuphansi kunalokho ngefilimu ye-Au ehwamukile (bona umkhiwane S14). Ukuhamba kokugcwala kwe-transistor elula kucishe kube ngu-5.6 cm2/Vs, okufana nalokho kwama-transistors e-CNT ahlelwe nge-polymer efanayo kuma-substrates e-Si aqinile ane-300-nm SiO2 njengongqimba lwe-dielectric. Ukuthuthukiswa okuqhubekayo ekuhambeni kungenzeka nge-tube density elungiselelwe kanye nezinye izinhlobo zamashubhu (46).
(A) Uhlelo lwe-graphene-based stretchable transistor. Ama-SWNTs, ama-carbon nanotubes anodonga olulodwa. (B) Isithombe sama-transistors anwebekayo esenziwe ngama-electrode e-graphene (phezulu) nama-electrode e-CNT (ngezansi). Umehluko obala ubonakala ngokucacile. (C no-D) Ukudlulisa nokuphuma kwamajika we-graphene-based transistor ku-SEBS ngaphambi kobunzima. (E no-F) Dlulisa amajika, ukuvula nokuvala okwamanje, isilinganiso sokuvula/ukuvala, nokuhamba kwe-graphene-based transistor ezinhlobonhlobo ezahlukene.
Lapho idivayisi ebonisa ngale, yonke ikhabhoni yelulelwa ohlangothini oluhambisana nendawo yokuthutha eshaja, ukuwohloka okuncane kwabonwa kufika ku-120%. Ngesikhathi sokwelula, ukuhamba kwehla ngokuqhubekayo kusuka ku-5.6 cm2 / Vs ku-0% ubunzima kuya ku-2.5 cm2 / Vs ku-120% ubunzima (Fig. 5F). Siphinde saqhathanisa ukusebenza kwe-transistor ngobude obuhlukile besiteshi (bona ithebula S1). Ngokuphawulekayo, ngobunzima obungango-105%, wonke lawa ma-transistors asabonisa isilinganiso esiphezulu sokuvula/ukuvala (>103) nokuhamba (>3 cm2/Vs). Ngaphezu kwalokho, sifingqe wonke umsebenzi wakamuva wawo wonke ama-transistors ekhabhoni (bona ithebula S2) (47–52). Ngokuthuthukisa ukwakhiwa kwedivayisi kuma-elastomers nokusebenzisa ama-MGG njengothintana nabo, ama-transistors ethu e-carbon all-carbon abonisa ukusebenza okuhle ngokuya ngokuhamba kanye ne-hysteresis kanye nokunwebeka kakhulu.
Njengokusetshenziswa kwe-transistor esobala ngokugcwele nenwebekayo, siyisebenzisele ukulawula ukushintsha kwe-LED (Fig. 6A). Njengoba kuboniswe ku-Fig. 6B, i-LED eluhlaza ingabonakala ngokucacile ngokusebenzisa idivayisi ye-carbon yonke enwebekayo ebekwe ngaphezulu ngokuqondile. Ngenkathi inweba ibe ngu-~100% (Umfanekiso 6, C no-D), ukukhanya kwe-LED akushintshi, okuhambisana nokusebenza kwe-transistor okuchazwe ngenhla (bona i-movie S1). Lona umbiko wokuqala wamayunithi okulawula anwebekayo enziwe kusetshenziswa ama-electrode e-graphene, okubonisa ithuba elisha lezinto zikagesi ezinwebekayo ze-graphene.
(A) Isiyingi se-transistor ukushayela i-LED. GND, phansi. (B) Isithombe se-transistor enwebekayo nebonisa ngale yekhabhoni yonke ku-0% uhlobo olufakwe ngaphezu kwe-LED eluhlaza. (C) I-transistor ebonisa ngale nenwebekayo ye-carbon all-carbon esetshenziselwa ukushintsha i-LED ikhwezwa ngaphezu kwe-LED ngo-0% (kwesokunxele) kanye no-~100% uhlobo (kwesokudla). Imicibisholo emhlophe ikhomba njengezimpawu eziphuzi kudivayisi ukuze zibonise ushintsho lwebanga olunwetshwayo. (D) Ukubuka okuseceleni kwe-transistor eluliwe, ne-LED iphushelwe ku-elastomer.
Sengiphetha, sithuthukise isakhiwo se-graphene esibonisa ngale egcina ukusebenza okuphezulu ngaphansi kwezinkinga ezinkulu njengama-electrode anwebekayo, anikwe amandla ama-graphene nanoscroll phakathi kwezingqimba ze-graphene ezistakiwe. Lezi zakhiwo zama-electrode ze-MGG ze-bi- and trilayer ku-elastomer zingagcina u-21 kanye no-65%, ngokulandelana, we-conductivity yazo engu-0% ngobunzima obufinyelela ku-100%, uma kuqhathaniswa nokulahlekelwa okuphelele kokusebenza ngo-5% uhlobo lwama-electrode e-monolayer graphene avamile. . Izindlela ezengeziwe zokuqhuba zemiqulu ye-graphene kanye nokusebenzisana okubuthakathaka phakathi kwezingqimba ezidlulisiwe kunomthelela ekuzinzeni okuphezulu kokusebenza ngaphansi kobunzima. Siphinde sasebenzisa lesi sakhiwo se-graphene ukuze senze ama-transistors anwebekayo ekhabhoni yonke. Kuze kube manje, lena i-graphene-based transistor elula kakhulu enokukhanya okuhle kakhulu ngaphandle kokusebenzisa i-buckling. Nakuba isifundo samanje senziwe ukuze sikwazi i-graphene ye-electronics stretchable, sikholelwa ukuthi le ndlela inganwetshwa kwezinye izinto ze-2D ukuze kunikwe amandla i-electronics ye-2D elula.
Indawo enkulu ye-CVD graphene yakhuliswa kuma-Cu foil amisiwe (99.999%; Alfa Aesar) ngaphansi kwengcindezi eqhubekayo engu-0.5 mtorr no-50–SCCM (i-cubic centimeter evamile ngomzuzu) CH4 kanye no-20–SCCM H2 njengamanduleli ku-1000°C. Zombili izinhlangothi ze-Cu foil zazimbozwe i-monolayer graphene. Ungqimba oluncane lwe-PMMA (2000 rpm; A4, Microchem) lwalujikijelwe ohlangothini olulodwa lwe-Cu foil, lwakha isakhiwo se-PMMA/G/Cu foil/G. ngemuva kwalokho, yonke ifilimu yacwiliswa ku-0.1 M ammonium persulfate [(NH4)2S2O8] isixazululo cishe amahora angu-2 ukuze kukhishwe i-Cu foil. Phakathi nale nqubo, i-graphene engemuva engavikelekile iqale yadabula imingcele yokusanhlamvu yase igoqwa yaba imiqulu ngenxa yokungezwani kwendawo. Imiqulu inanyathiselwe efilimini ye-graphene ephezulu esekelwa yi-PMMA, okwenza imiqulu ye-PMMA/G/G. Amafilimu abe esegezwa emanzini akhishwe kaningi izikhathi eziningana futhi abekwa endaweni engaphansi okuhlosiwe, njenge-SiO2/Si eqinile noma i-plastic substrate. Lapho nje ifilimu enamathiselwe yomile ku-substrate, isampula yacwiliswa ngokulandelana ku-acetone, 1:1 i-acetone/IPA (isopropyl alcohol), kanye ne-IPA imizuzu engu-30 ngayinye ukuze kukhishwe i-PMMA. Amafilimu ashiswe ku-100 ° C imizuzu engu-15 noma agcinwe ku-vacuum ubusuku bonke ukuze akhiphe ngokuphelele amanzi avalelwe ngaphambi kokuba enye isendlalelo somqulu we-G/G sidluliselwe kuwo. Lesi sinyathelo bekuwukugwema ukuhlukaniswa kwefilimu ye-graphene kusuka ku-substrate futhi kuqinisekiswe ukumbozwa okugcwele kwama-MGG ngesikhathi sokukhishwa kwesendlalelo senkampani yenethiwekhi ye-PMMA.
I-morphology yesakhiwo se-MGG yabonwa kusetshenziswa isibonakhulu esibonakalayo (Leica) kanye nesibonakhulu se-electron yokuskena (1 kV; FEI). Isibonakhulu samandla e-athomu (i-Nanoscope III, I-Digital Instrument) yasetshenziswa kumodi yokuthepha ukuze kubonwe imininingwane ye-G scrolls. Ukuba sobala kwefilimu kuhlolwe i-spectrometer ebonakalayo e-ultraviolet (Agilent Cary 6000i). Ezivivinyweni lapho uhlobo luhambisana ne-perpendicular direction yokugeleza kwamanje, i-photolithography ne-O2 plasma yasetshenziselwa ukuphethini izakhiwo ze-graphene zibe yimicu (~300 μm ububanzi kanye ~2000 μm ubude), kanye nama-electrode e-Au (50 nm) afakwa ngokushisa kusetshenziswa. imaski yethunzi emikhawulweni yomibili yohlangothi olude. Imichilo ye-graphene ibe isixhunywa ne-SEBS elastomer (~2 cm ububanzi no-~5 cm ubude), ene-eksisi ende yemigqa ehambisana nohlangothi olufushane lwe-SEBS elandelwa yi-BOE (i-buffered oxide etch) (HF:H2O 1:6) etching kanye ne-eutectic gallium indium (EGaIn) njengokuxhumana kukagesi. Ngokuhlolwa kohlobo olufanayo, i-graphene structur es engaphethiwe (~5 × 10 mm) idluliselwe kuma-substrate e-SEBS, anezimbazo ezinde ezihambisana nohlangothi olude lwe-substrate ye-SEBS. Kuzo zombili izimo, yonke i-G (ngaphandle kwemiqulu ye-G)/SEBS yanwetshwa ohlangothini olude lwe-elastomer emshinini ophathwayo, futhi ku-situ, silinganise izinguquko zabo zokumelana ngaphansi kokucindezeleka esiteshini sokuhlola esinomhlaziyi we-semiconductor (Keithley 4200). -SCS).
Ama-transistors e-carbon all-carbon anwebeka kakhulu futhi asobala ku-elastic substrate akhiwe ngezinqubo ezilandelayo ukugwema ukulimala kwe-organic solvent ye-polymer dielectric ne-substrate. Izakhiwo ze-MGG zadluliselwa ku-SEBS njengama-electrode esango. Ukuze uthole ungqimba lwe-dielectric lwefilimu encane yefilimu ye-polymer (ubukhulu obungu-2 μm), isixazululo se-SEBS toluene (80 mg/ml) sasigqunywe nge-spin-coated ku-octadecyltrichlorosilane (OTS)–modified SiO2/Si substrate ngo-1000 rpm for 1 min. Ifilimu elincanyana le-dielectric lingadluliswa kalula lisuka endaweni eyi-hydrophobic OTS liye ku-SEBS substrate embozwe ngegraphene elungiselelwe. I-capacitor ingenziwa ngokufaka i-liquid-metal (EGaIn; Sigma-Aldrich) i-electrode ephezulu ukuze kunqunywe amandla njengomsebenzi wobunzima kusetshenziswa i-LCR (inductance, capacitance, resistance) imitha (Agilent). Enye ingxenye ye-transistor yayinama-CNTs e-polymer-sorted semiconducting, elandela izinqubo ezibikwe ngaphambilini (53). Ama-electrod anephethini womthombo/wokukhipha amanzi akhiwe kuma-substrates e-SiO2/Si aqinile. Kamuva, lezi zingxenye ezimbili, i-dielectric/G/SEBS kanye ne-CNTs/iphethini ye-G/SiO2/Si, yahlanganiswa komunye nomunye, futhi yacwiliswa ku-BOE ukuze isuse i-SiO2/Si substrate eqinile. Ngakho-ke, ama-transistors asobala ngokuphelele futhi anwebekayo akhiwe. Ukuhlolwa kukagesi ngaphansi kokucindezeleka kwenziwa ekusetheni kokunwetshwa kwemanuwali njengendlela eshiwo ngenhla.
Izinto ezingeziwe zalesi sihloko zitholakala ku-http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
umkhiwane. I-S1. Izithombe ze-Optical microscopy ze-monolayer MGG ku-SiO2/Si substrates ngokukhuliswa okuhlukene.
umkhiwane. S4. Ukuqhathaniswa kokuphikiswa kweshidi le-probe emibili kanye nokudluliselwa @550 nm ye-mono-, bi- kanye ne-trilayer plain graphene (izikwele ezimnyama), i-MGG (imibuthano ebomvu), kanye nama-CNT (unxantathu oluhlaza okwesibhakabhaka).
umkhiwane. I-S7. Ukushintsha kokumelana okujwayelekile kwe-mono- kanye ne-bilayer MGGs (emnyama) kanye no-G (obomvu) ngaphansi ~ ~ 1000 uhlobo lwe-cyclic strain ukulayisha kufika ku-40 kanye no-90% we-parallel strain, ngokulandelanayo.
umkhiwane. I-S10. Isithombe se-SEM se-trilayer MGG ku-SEBS elastomer ngemva kobunzima, sibonisa isiphambano sokuskrola eside phezu kwemifantu embalwa.
umkhiwane. S12. Isithombe se-AFM se-trilayer MGG ku-SEBS elastomer ezacile kakhulu ngo-20% uhlobo, okubonisa ukuthi umqulu weqe umfantu.
ithebula S1. Ukuhamba kwe-bilayer MGG–i-carbon nanotube transistors enodonga olulodwa ngobude obuhlukene besiteshi ngaphambi nangemuva kobunzima.
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QAPHELA: Sicela ikheli lakho le-imeyili kuphela ukuze umuntu omncomayo ikhasi azi ukuthi ubufuna alibone, nokuthi aliyona i-imeyili eyimfucuza. Asithathi noma yiliphi ikheli le-imeyili.
Lo mbuzo owokuhlola ukuthi uyisivakashi esingumuntu noma cha kanye nokuvikela ukuthunyelwa kogaxekile okuzenzakalelayo.
NguNan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
NguNan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
© 2021 Inhlangano YaseMelika Yokuthuthukiswa Kwesayensi. Wonke Amalungelo Agodliwe. I-AAAS inguzakwethu we-HINARI, AGORA, OARE, CHORUS, CLOCKSS, CrossRef kanye ne-COUNTER.Science Advances ISSN 2375-2548.
Isikhathi sokuthumela: Jan-28-2021